ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,214, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Source drain formation in gate all around transistor... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,215, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Boundary gate structure for diffusion break ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,216, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor protection layers and me... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,217, issued on Sept. 1, was assigned to Korea Institute of Science and Technology (Seoul, South Korea). "Semiconductor device including tre... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,218, issued on Sept. 1, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and method for manufacturing th... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,219, issued on Sept. 1, was assigned to PROTERIAL LTD. (Tokyo). "Silicon carbide substrate having excellent flatness and low basal plane di... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,220, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Research & Business Foundation Sungkyunk... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,221, issued on Sept. 1, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China). "Semiconductor device including a... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,222, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor gate structures and meth... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,223, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Fin field-effect transistor device ... Read More